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| HiPerFASTTM IGBT LightspeedTM Series IXGH 12N60CD1 VCES = 600 V IC25 = 24 A VCE(sat) = 2.7 V tfi(typ) = 55 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 33 Clamped inductive load, L = 300 H TC = 25C Maximum Ratings 600 600 20 30 24 12 48 ICM = 24 @ 0.8 VCES 100 -55 ... +150 150 -55 ... +150 V V V V A A A A W C C C TO-247 AD C (TAB) G C E G = Gate, E = Emitter, C = Collector, TAB = Collector Mounting torque with screw M3 Mounting torque with screw M3.5 0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. 6 300 g C Features l l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s l Very high frequency IGBT New generation HDMOSTM process International standard package JEDEC TO-247AD High peak current handling capability Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25C TJ = 125C 5.0 200 1.5 100 2.1 2.7 V V A mA nA V Applications l l BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250 A, VGE = 0 V = 250 A, VGE = VGE l l VCE = 0.8 VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = ICE90, VGE = 15 V l PFC circuit AC motor speed control DC servo and robot drives Switch-mode and resonant-mode power supplies High power audio amplifiers Advantages l l Fast switching speed High power density (c) 2002 IXYS All rights reserved 98623A (2/02) IXGH 12N60CD1 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 5 11 860 VCE = 25 V, VGE = 0 V, f = 1 MHz 100 15 32 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 300 H VCE = 0.8 VCES, RG = Roff = 18 Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 300 H VCE = 0.8 VCES, RG = Roff = 18 Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG IGBT 0.25 10 10 20 20 60 55 0.09 20 20 0.5 85 85 0.27 180 180 0.60 S P TO-247 AD Outline gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK IC = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ e Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 1.25 K/W K/W Reverse Diode (FRED) Symbol VF Test Conditions I F = 15A; T VJ = 150C T VJ = 25C Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1.7 2.5 2 2.5 V V A IRM t rr RthJC V R = 100 V; I F =25A; -di F /dt = 100 A/s L < 0.05 H; T VJ = 100C IF = 1 A; -di/dt = 50 A/s; VR = 30 V TJ = 25C Diode 35 ns 1.6 K/W IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 |
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